Ansenmei EliteSiC SPM 31 Intelligent Power Module (IPM) helps achieve
More compact variable frequency motor drive with industry-leading energy efficiency and performance
Shanghai, China – March 18, 2025- Onsemi (NASDAQ: ON) has launched its first generation SPM 31 intelligent power module (IPM) series based on 1200V silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs). Compared to using the 7th generation Field Cut Off (FS7) IGBT technology, the Anson Midea EliteSiC SPM 31 IPM provides ultra-high energy efficiency and power density in an ultra compact package size, achieving lower overall system costs than other leading solutions on the market. These IPMs improve thermal performance, reduce power consumption, support fast switching speeds, and are highly suitable for three-phase variable frequency drive applications such as AI data centers, heat pumps, commercial HVAC systems, servo motors, robots, variable frequency drives (VFDs), and electronic commutation (EC) fans in industrial pumps and fans.
The EliteSiC SPM 31 IPM and Ansenmei IGBT SPM 31 IPM product combination (covering low currents from 15A to 35A) complement each other, providing multiple rated currents from 40A to 70A. Ansenmei currently provides industry-leading, widely scalable, and flexible integrated power module solutions in compact packaging.
With the growth of electrification and artificial intelligence applications, especially the construction of more AI data centers that increase energy demand, reducing energy consumption in this field has become increasingly important. In the process of transitioning to a low-carbon emission world, power semiconductors that can efficiently convert electrical energy play a crucial role.
As the number and scale of data centers continue to grow, it is expected that the demand for EC fans will also increase accordingly. These cooling fans can maintain an ideal operating environment for all equipment in the data center, which is crucial for accurate and error free data transmission. SiC IPM ensures that EC fans operate reliably with higher energy efficiency.
Like many other industrial applications such as compressor drives and pumps, EC fans require higher power density and energy efficiency than existing larger IGBT solutions. By switching to EliteSiC SPM 31 IPM, customers will benefit from smaller size, higher performance, and simplified design due to high integration, thereby reducing development time, overall system costs, and greenhouse gas emissions. For example, compared to the system solution using the current IGBT power integration module (PIM), the power loss at 70% load is 500W, while adopting the efficient EliteSiC SPM 31 IPM can reduce the annual energy consumption and cost of each EC fan by 52%.
The fully integrated EliteSiC SPM 31 IPM includes an independent upper bridge gate driver, low voltage integrated circuit (LVIC), six EliteSiC MOSFETs, and a temperature sensor (voltage temperature sensor (VTS) or thermistor). This module is based on industry-leading M3 SiC technology, reducing the die size and utilizing SPM 31 packaging to improve short-circuit withstand time (SCWT), thus optimizing for hard switch applications and suitable for industrial variable frequency motor drives. MOSFET adopts a three-phase bridge structure, and the lower bridge arm is connected to an independent source, which fully improves the flexibility of the selection control algorithm.
In addition, the EliteSiC SPM 31 IPM also includes the following advantages:
The M3 EliteSiC MOSFET with low loss and rated short-circuit resistance can prevent catastrophic failures of equipment and components, such as electric shock or fire.
Built in undervoltage protection (UVP) to prevent equipment damage when the voltage is too low.
As an equivalent product of FS7 IGBT SPM 31, customers can choose different rated currents while using the same PCB board.
Obtained UL certification, in compliance with national and international safety standards.
A single grounded power supply can provide better safety, equipment protection, and noise reduction.
Simplify the design and reduce the size of the customer’s circuit board, thanks to:
Gate driver control and protection
Built in bootstrap diode (BSD) and bootstrap resistor (BSR)
Provide internal boost diodes for the upper bridge gate boost drive
Integrated temperature sensor (VTS output by LVIC and/or thermistor)
Built in high-speed and high-voltage integrated circuit
About onsemi
Onsemi (NASDAQ: ON) is committed to driving disruptive innovation and creating a better future. The company focuses on the major trends in the automotive and industrial terminal markets, accelerating the transformation and innovation of automotive functional electronics and automotive safety, sustainable power grids, industrial automation, as well as 5G and cloud infrastructure and other sub sectors. Ansenmei provides a highly differentiated and innovative product portfolio, as well as intelligent power and sensing technologies, to address the world’s most complex challenges and lead the creation of a safer, cleaner, and smarter world. Anson Mei is listed on the Fortune 500 in the United States and is also included in the Nasdaq 100 and S&P 500 indices.
